1994. 3. 24 1/1 semiconductor technical data KTA1272 epitaxial planar pnp transistor revision no : 0 high current application. features high h fe : h fe =100 320. complementary to ktc3204. maximum rating (ta=25 1 ) 1 2 3 to-92m dim millimeters a b c d e f g h j k 1. emitter 2. collector 3. base 3.20 max 4.30 max 0.55 max 2.40 0.15 1.27 2.30 14.00 0.50 0.60 max 1.05 1.45 25 0.55 max l m n f a g j k d ee l n m c h 0.80 o 0.75 o b + _ + _ characteristic symbol rating unit collector-base voltage v cbo -35 v collector-emitter voltage v ceo -30 v emitter-base voltage v ebo -5 v collector current i c -800 ma emitter current i e 800 ma collector power dissipation p c 400 mw junction temperature t j 150 1 storage temperature range t stg -55 150 1 characteristic symbol test condition min. typ. max. unit collector cut-off current i cbo v cb =-30v, i e =0 - - -100 na emitter cut-off current i ebo v eb =-5v, i c =0 - - -100 na collector-emitter breakdown voltage v (br)ceo i c =-10ma, i b =0 -30 - - v dc current gain h fe (1) (note) v ce =-1v, i c =-100ma 100 - 320 h fe (2) v ce =-1v, i c =-700ma 35 - - collector-emitter saturation voltage v ce(sat) i c =-500ma, i b =-20ma - - -0.7 v base-emitter voltage v be v ce =-1v, i c =-10ma -0.5 - -0.8 v transition frequency f t v ce =-5v, i c =-10ma - 120 - mhz collector output capacitance c ob v cb =-10v, i e =0, f=1mhz - 19 - pf note : h fe (1) classification 0:100 200, y:160 320 electrical characteristics (ta=25 )
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